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Lanio3 resistivity

WebNov 20, 2014 · The interfacial atomic structure of a metallic LaNiO3/LaAlO3 superlattice grown on a LaSrAlO4 substrate was investigated using a combination of atomically resolved electron energy loss spectroscopy (EELS) at the Al K, Al L2,3, Sr L2,3, Ni L2,3, La M 4,5, and O K edges as well as hybridization mapping of selected features of the O K -edge … WebAug 7, 2024 · LaNiO 3 is referred to as “Sr0,” La 0.88 Sr 0.12 NiO 3 as “Sr12,” La 0.75 Sr 0.25 NiO 3 as “Sr25,” and La 0.5 Sr 0.5 NiO 3 as “Sr50.” c) Reciprocal space mapping for the crystal truncation rods of LSNO films. The broad spot comes from parasitic scattering of W stripes used to block the extremely strong substrate Bragg peaks.

Scaling like behaviour of resistivity observed in LaNiO₃ ... - PubMed

WebNov 16, 2015 · ... The electrical properties of LNO are sensitive to mechanical stress, grain boundaries, and pores [1,22]. The resistivity of LNO films can vary from 100 to 10,000 … WebDec 9, 2015 · Scaling like behaviour of resistivity observed in LaNiO₃ thin films grown on SrTiO₃ substrate by pulsed laser deposition We discuss the origin of the temperature dependence of resistivity ρ observed in highly oriented LaNiO3 thin films grown on SrTiO3 substrate by a pulsed laser deposition technique. basis japan desk https://perfectaimmg.com

LaNiO3 films with tunable out‐of‐plane lattice parameter and their ...

WebJun 7, 2024 · Metal-insulator transition in ultrathin LaNiO 3 films. a Temperature-dependent resistivity ( ρ) of LaNiO 3 films of different thicknesses. b Metal-insulator transition … WebCharacteristics of LaNiO3(LNO) thin films deposited by rf sputtering process were compared with that prepared by pulsed laser deposition (PLD) process. rf sputtered LNO films were [200] preferentially oriented with a low surface resistivity (&rgr;s=0.55 m&OHgr; cm) and the PLD deposited films were [110] predominated with a slightly … WebNational Center for Biotechnology Information tag\u0027s zp

High-quality LaNiO3 thin-film electrode grown by pulsed …

Category:Resisitivity, thermopower, and susceptibility of RNiO3 (R=La,Pr)

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Lanio3 resistivity

Systematic effects of Ti doping on the electronic …

WebJun 4, 1998 · Highly (100)‐oriented LaNiO3(LNO) thin films were grown on Si, ... those prepared at substrate temperature ∼150–250 °C have a resistivity of 0.4–0.5 mΩ cm and can be used as the bottom electrode for the fabrication of integrated ferroelectric capacitors on Si. A subsequent deposition of sol‐gel derived Pb ... WebHigh purity (>99.9%) lanthanum nitrate [La (NO3)36H2O] and nickel nitrate [Ni (NO3)23H2O] were used as starting materials for LaNiO3 (LNO) precursor solution. Stoichiometric amount of each metal salts [...] 10.1007/s10854-015-4103-z. BNO and LNO thin films were prepared by the polymeric precursor method, as described elsewhere [14].

Lanio3 resistivity

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WebSelect search scope, currently: articles+ all catalog, articles, website, & more in one search; catalog books, media & more in the Stanford Libraries' collections; articles+ journal articles & other e-resources WebJan 10, 2024 · The resistivity of LaNiO 3 films, grown by chemical vapor deposition, was mainly defined by microstructural defects and La/Ni composition. The high epitaxial quality LaNiO 3 /LaAlO 3 films with nearly stoichiometric La/Ni ratio presented low resistivity, …

WebNov 6, 2013 · Resistivity is measured with the van der Pauw method in a physical property measurement system. Resonant magnetic X-ray diffraction at the Ni L 3 -edge is utilized to directly track the E ′-type... WebApr 1, 2024 · The electrocatalytic performance of LaNiO 3 samples for the ORR has been evaluated in oxygen saturated 0.1 M KOH electrolytes between 0.6 and 1.1 V at 10 mVs …

WebTuning electronic properties in LaNiO3 thin films by B-site Cu-substitution Henrik H. Sønsteby et al - Tuning the Selectivity of LaNiO3 Perovskites for CO2 Hydrogenation through Potassium Substitution Constantine Tsounis et al - Counter-thermal flow of holes in high- mobility LaNiO3 thin films Changjiang Liu et al -

WebThe resistivity of LaNiO3 shows a T2 dependence below 80 K and changes over to a T1.5 dependence at higher temperature (100-300 K). The resistivity of PrNiO3 exhibits a …

WebWe observed that the temperature dependence of resistivity ρ (T ) notably depends on the relation between the grain size R g and the film thickness d. Namely, more granular LaN iO 3 thin films... basis japansWebSep 1, 2015 · The out‐of‐plane (c‐axis) strain of LNO deposited on LaAlO3 with increasing oxygen pressure changed from positive to negative. All the films show an excellent metallic conductivity with positive resistivity temperature coefficient. Lowest resistivity was … basis jantung adalahWebMar 15, 2001 · The films deposited at various temperatures below 650°C (and under 0.1 mbar oxygen pressure) have resistivities of approximately 4 mΩ cm. The two films deposited at 700 and 750°C have values close to 12 mΩ cm, despite having a better crystallinity as indicated by their narrower rocking curves. basis jura bonnhttp://archive.nstl.gov.cn/Archives/browse.do?action=viewDetail&articleID=a5690adba831ba2b&navig=9565bcbb40dbfbe9&navigator=category&flag=byWord&subjectCode=null&searchfrom=null tag\u0027s zwWebAug 7, 2024 · The perovskite oxide LaNiO 3 is a promising oxygen electrocatalyst for renewable energy storage and conversion technologies. Here, it is shown that strontium … taguan jroa spoken poetryWebFeb 22, 2024 · The conclusions of this study are as follows: (i) the XRD patterns of LaNiO 3 films cannot be used to predict whether films will be conductive or insulating, (ii) the … tag\u0027s zrWebJan 23, 2024 · LaNiO 3 thin films have been deposited by pulsed laser deposition on SrTiO 3 (100) and LaAlO 3 (100) substrates. The processing conditions have been investigated … basis jantung terletak di